Controlling melt-solid interface shape of a growing silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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C117S032000, C117S213000, C117S917000

Reexamination Certificate

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11026780

ABSTRACT:
Methods and system for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

REFERENCES:
patent: 4436577 (1984-03-01), Frederick et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4617173 (1986-10-01), Latka
patent: 4659423 (1987-04-01), Kim et al.
patent: 4830703 (1989-05-01), Matsutani
patent: 4849188 (1989-07-01), Takasu et al.
patent: 5178720 (1993-01-01), Frederick
patent: 5653799 (1997-08-01), Fuerhoff
patent: 5665159 (1997-09-01), Fuerhoff
patent: 5846318 (1998-12-01), Javidi
patent: 5871578 (1999-02-01), Lino et al.
patent: 5882402 (1999-03-01), Fuerhoff
patent: 5911823 (1999-06-01), Sonoda et al.
patent: 6535092 (2003-03-01), Hurley et al.
patent: 0194051 (1986-09-01), None
patent: 60011297 (1985-01-01), None
patent: 8908731 (1989-09-01), None
Proceedings of the SPIE—The International Society for Optical Engineering (1993), vol. 1916, pp. 65-75, Dulikravich, et al.
Watanabe et al., “Flow and Temperature Field in Molten Silicon During Czochralski Crystal Growth in a Cusp Magnetic Field,” Journal of Crystal Growth, Oct. 1, 1998, pp. 402-412, vol. 193, No. 3, Amsterdam, NL.
Hirata et al., “Homogeneous Increase in Oxygen Concentration in Czochralski Silicon Crystal by a Cusp Magnetic Field,” Journal of Crystal Growth, Dec. 1, 1989, pp. 777-781, vol. 98, No. 4, Amsterdam, NL.

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