Controlling diffusion in doped semiconductor regions

Details Controlling diffusion in doped semiconductor regions Controlling diffusion in doped semiconductor regions

2007-11-27

2007-11-27

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

C257SE21043, C257SE21057, C257SE21343, C438S546000, C438S185000, C438S514000

Reexamination Certificate

active

11217776

ABSTRACT:
A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements includes selecting a first impurity element with a first atomic radius larger than an average host matrix atomic radius and selecting a second impurity element with a second atomic radius smaller than an average host matrix atomic radius. The methods and devices further include selecting amounts of each impurity element of the plurality of impurity elements wherein amounts and atomic radii of each of the plurality of impurity elements complement each other to reduce a host matrix lattice strain.

REFERENCES:
patent: 3812519 (1974-05-01), Nakamura et al.
patent: 4111719 (1978-09-01), Mader et al.
patent: 4137103 (1979-01-01), Mader et al.
patent: 4155785 (1979-05-01), Cuomo et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4369072 (1983-01-01), Bakeman et al.
patent: 4569697 (1986-02-01), Tsu et al.
patent: 4629520 (1986-12-01), Ueno et al.
patent: 4746964 (1988-05-01), Aronowitz
patent: 4769689 (1988-09-01), Lin
patent: 4778772 (1988-10-01), Takahashi et al.
patent: 4851360 (1989-07-01), Haken et al.
patent: 4875085 (1989-10-01), Ueno et al.
patent: 5021851 (1991-06-01), Haken et al.
patent: 5116455 (1992-05-01), Daly
patent: 5212101 (1993-05-01), Canham et al.
patent: 5231298 (1993-07-01), Daly
patent: 5245208 (1993-09-01), Eimori
patent: 5261999 (1993-11-01), Pinker et al.
patent: 5280185 (1994-01-01), Aronowitz et al.
patent: 5281831 (1994-01-01), Uemoto et al.
patent: 5311055 (1994-05-01), Goodman et al.
patent: 5345104 (1994-09-01), Prall et al.
patent: 5389809 (1995-02-01), Haken et al.
patent: 5510630 (1996-04-01), Agarwal et al.
patent: 5561072 (1996-10-01), Saito
patent: 5654210 (1997-08-01), Aronowitz et al.
patent: 5789310 (1998-08-01), Pramanick et al.
patent: 5814541 (1998-09-01), Shibata
patent: 5837597 (1998-11-01), Saito
patent: 5937318 (1999-08-01), Warner, Jr. et al.
patent: 6037625 (2000-03-01), Matsubara et al.
patent: 6133082 (2000-10-01), Masuoka
patent: 6235599 (2001-05-01), Yu
patent: 6258695 (2001-07-01), Dunn et al.
patent: 6368928 (2002-04-01), Wang et al.
patent: 6437374 (2002-08-01), Northrup et al.
patent: 6455402 (2002-09-01), Lee et al.
patent: 6518150 (2003-02-01), Matsumoto
patent: 6576521 (2003-06-01), Chaudhry et al.
patent: 6696341 (2004-02-01), Sonoda
patent: 6797593 (2004-09-01), Chakravarthi et al.
patent: 6930360 (2005-08-01), Yamauchi et al.
patent: 6991972 (2006-01-01), Lochtefeld et al.
patent: 2002/0063294 (2002-05-01), Brown et al.
patent: 2003/0013260 (2003-01-01), Gossmann et al.
patent: 2003/0087510 (2003-05-01), Chen
patent: 2004/0038468 (2004-02-01), Hwang et al.
patent: 2005/0026403 (2005-02-01), Lee et al.
patent: 2006/0003535 (2006-01-01), Farrar et al.
patent: 2006/0003559 (2006-01-01), Farrar et al.
Darken, L S., et al., “Physical chemistry of metals”, Book, Published New York, McGraw-Hill,(1953),74-90, 457-458.
Eldridge, J M., et al., “Lowering stresses in silicon due to the presence of high concentration of N-type dopant”,IBM Technical Disclosure Bulletin, vol. 14, No. 10, (1972),3013-14.
Swalin, R A., “Thermodynamics of solids”, Book, Published New York, Wiley Series: Wiley series on the science and technology of materials,(1962),149-155.
Trumbore, F A., “Solid Solubilities of Impurity Elements in Germanium and Silicon”,The Bell System Technical Journal, 39, I.M. Mackintosh unpublished data is quoted by F.A. Trumbore in this article.,(1960),205-233.

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