Amplifiers – With semiconductor amplifying device – Including gain control means
Patent
1986-07-21
1988-04-12
Wan, Gene
Amplifiers
With semiconductor amplifying device
Including gain control means
330279, H03G 310
Patent
active
047377348
ABSTRACT:
The drain-to-source resistance of a field-effect transistor (FET) can be used as a variable resistor controlling say the gain of an AGC amplifier, the AGC signal being applied to the gate of the FET. However, the resistance is dependent not only upon the gate drive but also on the device characteristics which vary even from one sample to another of the same device type. Thus, replacing the FET in say an AGC amplifier may well change the amplifier characteristics. Similarly, it may be difficult to ensure that multiple reproductions of the amplifier operate uniformly. Herein, an FET of which the drain-to-source resistance controls the gain of an amplifier is implemented as one of two matched FET's in a dual FET device. The same drive signal is applied to both FET's and this drive signal is formed by a feedback circuit which sets the drive signal to maintain the current through the second FET dependent upon a received input signal and to maintain the potential across the second FET constant. As a result, the resistance of each FET becomes dependent only upon the received signal and not upon its inherent characteristics. The principle can be applied to other circuits, e.g., variable filters, and other resistance defining components, e.g., photo-resistors. Also, disclosed is an embodiment where only one FET is used and this is connected alternately first to a feedback circuit which derives and stores the proper signal and then the `user` circuit to be controlled by the FET.
REFERENCES:
patent: 4077014 (1978-02-01), Satoh
British Aerospace PLC
Wan Gene
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