Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2006-07-27
2009-12-22
Vu, Bao Q (Department: 2838)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S530000, C327S534000, C327S538000
Reexamination Certificate
active
07636011
ABSTRACT:
An ORing element for use in a power supply and/or power system. The ORing element may include a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor. The FET may be electrically connected between an input and an output. The first bipolar transistor may have an emitter electrically connected to the source of the FET and a collector electrically connected to a gate of the FET. The second bi-polar transistor may be diode connected, with its emitter electrically connected to its base. The emitter of the second bi-polar transistor may also be electrically connected to the base of the first bi-polar transistor. The collector of the second bi-polar transistor may be electrically connected to the drain of the FET.
REFERENCES:
patent: 5831471 (1998-11-01), Nakajima et al.
patent: 6060943 (2000-05-01), Jansen
patent: 6225857 (2001-05-01), Brokaw
patent: 6301133 (2001-10-01), Cuadra et al.
patent: 6469564 (2002-10-01), Jansen
patent: 6522190 (2003-02-01), Malik et al.
patent: 6594163 (2003-07-01), Tsai
patent: 6919758 (2005-07-01), Preslar et al.
patent: 7038433 (2006-05-01), Fan et al.
patent: 2002/0039034 (2002-04-01), Kohda
patent: 2005/0253642 (2005-11-01), Chen
patent: 3217791 (1983-11-01), None
patent: 2293290 (1996-03-01), None
patent: WO99/53618 (1999-10-01), None
“Regulating Pulse Width Modulator,” datasheet and application notes for 1524, SG2524/SG3524 devices, LinFinity Microelectronics, Mar. 18, 2005.
“Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors,” N.A. Samoilov, A.N. Frolov and S.V. Shutov; Technical Physics, vol. 43, No. 10; Oct. 1998; pp. 1262-1263.
“Equivalent doping profile transformation: A semi-empirical analytical method for predicting breakdown characteristics of an approximate single-diffused parallel-plane junction,” J. He, X. Shang and Y. Wang; IEEE Transactions on Electron Devices, vol. 48, No. 12; Dec. 2001; pp. 2763-2768.
Frederick Bruce A.
Weispfennig Daryl
Artesyn Technologies, Inc.
Harness & Dickey & Pierce P.L.C.
Vu Bao Q
LandOfFree
Controller for ORing field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controller for ORing field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controller for ORing field effect transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4065861