Controlled-turn-off high-power semiconductor component

Details Controlled-turn-off high-power semiconductor component Controlled-turn-off high-power semiconductor component

1992-02-04

1993-06-22

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257146, 257150, 257181, 257409, 257693, 257698, 257700, 257724, 257726, 257729, 257730, H01L 2974, H01L 2302, H01L 2316

Patent

active

052218511

ABSTRACT:
In a large-area controlled-turn-off high-power semiconductor component containing a multiplicity of finely structured individual components, a semiconductor device (12) is formed by a multiplicity of small-area semiconductor chips (7) which are accommodated alongside one another in a common housing (13) and connected in parallel. This achievement avoids problems of yield with structures which are becoming finer.

REFERENCES:
patent: 4313128 (1982-01-01), Schiegel
patent: 4596999 (1986-06-01), Gobrecht et al.
patent: 4801554 (1989-01-01), Gobrecht et al.
patent: 4829348 (1989-05-01), Broich et al.
patent: 4849800 (1989-07-01), Abbas et al.
patent: 5006921 (1991-04-01), Ishizuka et al.

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