Controlled temperature polycrystalline silicon nucleation

Details Controlled temperature polycrystalline silicon nucleation Controlled temperature polycrystalline silicon nucleation

1975-06-24

1978-05-02

Goolkasian, John T.

Coating processes

Electrical product produced

Condenser or capacitor

148 15, 148174, H01L 21205

Patent

active

040875717

ABSTRACT:
The diffusivity of an impurity in a layer of polycrystalline silicon is controlled by forming the polycrystalline silicon on a thin nucleating layer of polycrystalline silicon possessing a maximum {110} texture.

REFERENCES:
patent: 3484311 (1969-12-01), Benzing
patent: 3508962 (1970-04-01), Manasevit et al.
patent: 3734770 (1973-05-01), Price et al.

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