Controlled taper etching

Details Controlled taper etching Controlled taper etching

1993-12-06

1997-11-11

Dang, Trung

Fishing, trapping, and vermin destroying

437225, 437947, 437981, 148DIG161, 1566621, H01L 21469

Patent

active

056863632

ABSTRACT:
After a polycrystalline Si layer is deposited on an insulating film covering the surface of a semiconductor substrate, a mask layer having a desired pattern is deposited on the polycrystalline Si layer. Using the mask layer as an etching mask, the polycrystalline Si layer is dry-etched by a plasma etching process. In the plasma etching process, a metal halide (such as AlCl.sub.3 and AlBr.sub.3) gas is introduced in an etching reaction chamber, or Al halide is generated by reacting halogen (Cl, Br or the like) contained in an etching gas with Al constituting the inner wall of the etching reaction chamber or an electrode. The etching process is performed while attaching an Al halide film to the etched side walls of the polycrystalline film. The polycrystalline Si film is etched in a taper shape becoming thicker at the lower portion. The Al halide can be removed easily.

REFERENCES:
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4364793 (1982-12-01), Graves
patent: 4663643 (1987-05-01), Mimura
patent: 4855017 (1989-08-01), Douglas
patent: 4873176 (1989-10-01), Fisher
patent: 4943344 (1990-07-01), Tachi et al.
patent: 4986877 (1991-01-01), Tachi et al.
patent: 5211790 (1993-05-01), Tatsumi
patent: 5217570 (1993-06-01), Kadomura
patent: 5242536 (1993-09-01), Schoenborn
patent: 5258219 (1993-11-01), Iwamatsu
patent: 5310456 (1994-05-01), Kadomura
S. Wolf, et al., Silicon Processing For The VLSI Era, vol. 1: Process Technology, pp. 551-565, Lattice Press.
T. Ohiwa, et al., SiO.sub.2 Tapered Etching Employing Magnetron Discharge, 1990 Dry Process Symposium, V-3, pp. 105-109.
M. Sato, et al., Al-Cu Alloy Etching Using Aluminum Chloride Source, 1992 Dry Process Symposium, II-3, pp. 59-63.
Semiconductor Dry Etching Technology, pp. 111-112, 1992. (In Japanese).
R.A. Powell, Materials Processing Theory and Practices, vol. 4, pp. 10-11, 14-33.
Horiike, et al., Proceedings of 12th Symposium on Dry Process, pp. 21-30, 1979.

Affiliated with

Also associated with

Rating

Controlled taper etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlled taper etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled taper etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1228764