Controlled silicon doping of III-V compounds by thermal oxidatio

Details Controlled silicon doping of III-V compounds by thermal oxidatio Controlled silicon doping of III-V compounds by thermal oxidatio

1991-08-30

1993-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437247, 437912, 437987, H01L 21225

Patent

active

051889781

ABSTRACT:
The method for silicon doping of III-V compounds by depositing a layer of silicon on the surface of a III-V compound substrate and subjecting the silicon capped substrate to thermal oxidation at temperatures and in an oxidizing atmosphere sufficient to cause silicon to diffuse into the substrate. A subsequent annealing step enhances the electrical characteristics of the diffused region.

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