Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2006-05-11
2010-10-19
Chen, Bret (Department: 1715)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255700, C427S376100, C427S402000
Reexamination Certificate
active
07815970
ABSTRACT:
The present invention provides methods of preparing Group III-nitride films of controlled polarity and substrates coated with such controlled polarity films. In particular, the invention provides substrate preparation steps that optimize the substrate surface for facilitating growth of a Group III-polar film, an N-polar film, or a selectively patterned film with both a Group III-polar portion and an N-polar portion in precise positioning. The methods of the invention are particularly suited for use in CVD methods.
REFERENCES:
patent: 5296119 (1994-03-01), Moustakas
patent: 5385862 (1995-01-01), Moustakas
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5677538 (1997-10-01), Moustakas et al.
patent: 5686738 (1997-11-01), Moustakas
patent: 5725674 (1998-03-01), Moustakas et al.
patent: 5847397 (1998-12-01), Moustakas
patent: 6123768 (2000-09-01), Moustakas
patent: 6284042 (2001-09-01), Sasaoka
patent: 6576054 (2003-06-01), Melnik et al.
patent: 7592629 (2009-09-01), Lee et al.
patent: 2003/0194853 (2003-10-01), Jeon
patent: 2003/0198837 (2003-10-01), Craven et al.
patent: 2004/0062282 (2004-04-01), Matsuoka et al.
patent: 2007/0042560 (2007-02-01), Sumiya et al.
patent: 2007/0138505 (2007-06-01), Preble et al.
patent: 2009/0243043 (2009-10-01), Wang
patent: 2002270525 (2002-09-01), None
patent: 2005004213 (2005-01-01), None
Kim, K.S., et al., “The effects of nitridation on properties of GaN grown on sapphire substrate by metal-organic chemical vapour deposition”. Semicond. Sci. Technol. 14 (1999) pp. 557-560.
Paek, Jong-Sik, et al., “Nitridation of sapphire substrate and its effect on the growth of GaN layer at low temperature”. Journal of Crystal Growth 200 (1999) pp. 55-62.
Sumiya, Masatomo, et al., “Effect of treatments of sapphire substrate on growth of GaN film”. Applied Surface Science 244 (2005), pp. 269-272.
Nagata, Takhiro, et al. “Surface Nitridation of c-Plane Sapphire Substrate by Near-Atmospheric Nitrogen Plasma”. Japanese Journal of Applied Physics 48 (2009), pp. 040206-1 to 040206-3.
Sumiya, Masatomo, et al., “In-Situ RHEED Observation of MOCVD-GaN Film Growth”. Mat. Res. Soc. Symp. Proc. vol. 693, 2002, pp. I9.6.1-19.6.6.
Huang, et al., “Comparative Study of Ga- and N-Polar GaN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy,” J. Vac. Sci. Technol. B, 2002, vol. 20(6), pp. 2256-2264.
Ammu et al., “Epitaxial Growth of GaN for Optoelectronic Applications,” cited online Apr. 7, 2005 (http://www2.egr.uh.edu/˜smotamar/GaN/GaN/html).
Collazo et al., “Polarity Control of GaN Thin Films Grown by Metalorganic Vapor Phase Epitaxy,” Phys. Stat. Sol. (c), 2005, vol. 2(7), pp. 2117-2120.
Kim et al., “The Effects of Nitridation on Properties of GaN Grown on Sapphire Substrate by Metal-Organic Chemical Vapour Deposition,” Semicond. Sci. Technol., 1999, vol. 14, pp. 557-560.
Losurdo et al., “The Effect of Substrate Nitridation Temperature and Buffer Design on the Quality of GaN Epitaxial Films,” 10th European Workshop on MOVPE, Lecce, Italy, Jun. 8-11, 2003.
Mita et al., “Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates,” Mater. Res. Soc. Symp. Proc., 2005, vol. 831, pp. E3.20.1-E3.20.6.
Stutzmann et al., “Playing with Polarity,” Phys. Stat. Sol. (b), 2001, vol. 228(2), pp. 505-512.
Tischler, “Advances in Metalorganic Vapor-Phase Epitaxy,” IBM J. Res. Develop., 1990, vol. 34(6), pp. 828-848.
Collazo Ramón R.
Schlesser Raoul
Sitar Zlatko
Chen Bret
North Carolina State University
Womble Carlyle Sandridge & Rice PLLC
LandOfFree
Controlled polarity group III-nitride films and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlled polarity group III-nitride films and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled polarity group III-nitride films and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4204692