Controlled neck growth process for single crystal silicon

Details Controlled neck growth process for single crystal silicon Controlled neck growth process for single crystal silicon

2005-03-22

2005-03-22

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S020000, C117S023000, C117S035000

Reexamination Certificate

active

06869477

ABSTRACT:
A process for preparing a single crystal silicon in accordance with the Czochralski method, is provided. More specifically, by quickly reducing the pull rate at least once during the growth of the neck portion of the single crystal ingot, in order to change the melt/solid interface shape from a concave to a convex shape, the present process enables zero dislocation growth to be achieved in a large diameter neck within a comparably short neck length, such that large diameter ingots of substantial weight can be produced safely and at a high throughput.

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Hoshikawa, Keigo, et al., Dislocation-Free Czochralski Silicon Crystal Growth Without the Dislocation-Elimination-Necking Process, Japanese Journal of Applied Physics, Dec. 1, 1999, pp. L1369-L1371, vol. 38, No. 12A, Part 2, Tokyo, Japan.

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