Controlled mode field effect transistors and method therefore

Details Controlled mode field effect transistors and method therefore Controlled mode field effect transistors and method therefore

1986-03-07

1988-04-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 39, 437 40, 437 59, 357 22, 357 43, H01L 2970, H01L 2980

Patent

active

047374691

ABSTRACT:
A standard JFET or MESFET with a second gate is described. The second gate underlies the channel region, but is accessible from the same surface of the semiconductor body as are the other terminals of the transistor. Electrical signals are transmitted to the second gate by a heavily doped interconnect region. Isolation techniques prevent a voltage applied to this second gate from having a significant effect on adjoining electronic devices. Also described is a process for manufacturing such transistors using only steps which are present in a typical bipolar processing sequence.

REFERENCES:
patent: 4228450 (1980-10-01), Anantha et al.
patent: 4546370 (1985-10-01), Curran
Muggli, IBM Tech. Disc. Bull., v. 24(2), pp. 997-998 (Jul., 1981).

Affiliated with

Also associated with

Rating

Controlled mode field effect transistors and method therefore does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlled mode field effect transistors and method therefore, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled mode field effect transistors and method therefore will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1429357