Controlled leakage CMOS decoupling capacitor for application...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE27045

Reexamination Certificate

active

07098523

ABSTRACT:
A decoupling capacitor includes a fixed resistance in series with the capacitor, the resistance formed by contacts connecting a polysilicon layer to metal and a diffusion layer to metal; the contacts being of location and quantity sufficient for limiting defect current while allowing the capacitor to function at high frequency. N pairs of contacts in at least two sets of contacts are separated by a distance K sufficient to achieve a leakage limiting resistance of R and a bandwidth limiting resistance of R/2.

REFERENCES:
patent: 5119267 (1992-06-01), Sano et al.
patent: 5598029 (1997-01-01), Suzuki
patent: 5917230 (1999-06-01), Aldrich
patent: 6177716 (2001-01-01), Clark
patent: 6365954 (2002-04-01), Dasgupta

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