Controlled isotropic doping of semiconductor materials

Details Controlled isotropic doping of semiconductor materials Controlled isotropic doping of semiconductor materials

1987-03-02

1987-10-06

Ozaki, George T.

Fishing, trapping, and vermin destroying

437247, H01L 21385

Patent

active

046981047

ABSTRACT:
A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.

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