Controlled impedance bias circuit

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

Reexamination Certificate

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Details

C330S285000

Reexamination Certificate

active

07053716

ABSTRACT:
A bias circuit is provided to present a controlled impedance to an input of an RF amplifier to improve linearity of the RF amplifier. The bias circuit may control the impedance such that a low impedance is presented to the input of the amplifier at low frequencies and a high impedance is presented to the input of the amplifier at high frequencies.

REFERENCES:
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patent: 6233440 (2001-05-01), Taylor
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patent: 6750722 (2004-06-01), Newman et al.
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patent: 2002/0180521 (2002-12-01), Taylor
patent: 2003/0058045 (2003-03-01), Taylor et al.
patent: 2004/0043742 (2004-03-01), Beumer
“High-Frequency Nonlinearity Analysis of Common-Emitter and Differential-Pair Transconductance Stages”, Keng Leong Fong, et al., IEEE Journal of Solid-State Circuits, vol. 33, No. 4, Apr. 1998.
“A High IIP3Low Noise Amplifier for 1900 MHz Applications Using the SiGe BFP620 Transistor”, By Gerard Wevers, Infineon Technologies, Applied Microwave & Wireless, Jul. 2000.
“High-Frequency Anaylsis of Linearity Improvement Technique of Common-Emitter Transconductance Stage Using a Low-Frequency-Trap Network”, Keng Leong Fong, IEEE Journal of Solid-State Circuits, vol. 35, No. 8, Aug. 2000.

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