Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1990-04-02
1991-10-08
Pianalto, Bernard
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 42, 427 50, 427255, 4272553, 427294, 427295, 427314, 427319, B05D 306
Patent
active
050553194
ABSTRACT:
A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.
REFERENCES:
patent: 4767666 (1988-08-01), Bunshah et al.
"Alumina Deposition by Activated Reactive Evaporation", R. F. Bunshah and R. J. Schramm, Thin Solid Films, 40 (1977) 211-216.
"Synthesis and Characterization of Yttrium Oxide (Y.sub.2 O.sub.3) Deposits", M. Colen and R. F. Bunshah, J. Vac. Sci. Technol., vol. 13, No. 1, Jan./Feb. 1976, pp. 536-539.
"Reactive High Rate D.C. Sputtering of Oxides", M. Scherer and P. Wirz, Thin Solid Films, 119 (1984), 203-209.
"Synthesis of Various Oxides in the Ti-O System by Reactive Evaporation and Activated Reactive Evaporation Techniques", W. Grossklaus and R. F. Bunshah, J. Vac. Sci. Technol., vol. 12, No. 1, Jan./Feb. 1975, pp. 593-597.
"Processing Science and the Technology of High T.sub.c Films", R. F. Bunshah and C. V. Deshpandey, Res. & Dev., Jan. 1989, pp. 65-79.
"Ceramic Thin Films: Fabrication and Applications", M. Sayer and K. Sreenivas, Science, vol. 247, pp. 1056-1060.
Bunshah Rointan F.
Deshpandey Chandra V.
Doerr Hans J.
Yoon Jong S.
Pianalto Bernard
The Regents of the University of California
LandOfFree
Controlled high rate deposition of metal oxide films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlled high rate deposition of metal oxide films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled high rate deposition of metal oxide films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-256140