Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-06-26
2007-06-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S745000, C438S753000, C438S758000, C257SE21221
Reexamination Certificate
active
10900912
ABSTRACT:
The present invention relates to methods of making oxide layers, preferably ultrathin oxide layers, with a high level of uniformity. One such method includes the steps of forming a substantially saturated or saturated oxide layer directly or indirectly on a semiconductor surface of a semiconductor substrate, and etchingly reducing the thickness of the substantially saturated or saturated oxide layer by an amount such that the etched oxide layer has a thickness less than the substantially saturated or saturated oxide layer. In certain embodiments, methods of the present invention provide etched oxide layers with a uniformity of less than about +/−10%. The present invention also relates to microelectronic devices including made by methods of the present invention and manufacturing systems for carrying out methods of the present invention.
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FSI International Inc.
Kagan Binder PLLC
Lebentritt Michael
Roman Angel
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