Controlled, gas phase process for removal of trace metal contami

Details Controlled, gas phase process for removal of trace metal contami Controlled, gas phase process for removal of trace metal contami

1993-01-15

1996-12-31

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437239, 437946, 134 13, 1566461, H01L 21311, H01L 21316

Patent

active

055894224

ABSTRACT:
A ultra-clean, ULSI-supportable process is described for cleaning and etching very thin layers of a semiconductor surface in a gaseous ambient at approximately room temperature. An oxidized surface is etched and cleaned in the vapors of azeotropic, aqueous acids. The cleaning properties of the vapors of the aqueous acids are such that metallic contaminants residing at the surface or within the oxidized layer are complexed and later rinsed away in a rinsing process. The surface is then re-oxidized in an ozone ambient, the resultant oxidation reaction being self-limiting such that the oxide layer is grown to a consistent, predetermined thickness. The process may be repeated any number of times depending on the depth at which any contaminants reside.

REFERENCES:
patent: 3711324 (1973-01-01), Glendinning et al.
patent: 3773578 (1973-11-01), Glendinning et al.
patent: 4375125 (1983-03-01), Byatt
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5098866 (1992-03-01), Clark et al.
patent: 5169408 (1992-12-01), Biggerstaff
patent: 5238871 (1993-08-01), Seto
patent: 5240554 (1993-08-01), Hori et al.
patent: 5294568 (1994-03-01), McNeilly et al.
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5302240 (1994-04-01), Hori et al.
patent: 5380555 (1995-01-01), Mine et al.
patent: 5443863 (1995-08-01), Neely et al.
IBM Tech. Discl. Bull., Removal of Contamination Left From Reactive Ion Etching of Si Wafers Without Simultaneous Oxide Growth, vol. 33, No. 5, Oct. 1990, p. 269.
B. E. Deal, M. A. McNeilly, D. B. Kao, J. M. deLarios. "Vapor Phase Wafer Cleaning: Processing for the 1990s" Solid State Technology pp. 73-77, Jul. 1990.
M. Wong, D. Liu, M. Moslehi, Member, IEEE, D. Reed. "Preoxidation Treatment Using HCI/HF Vapor" IEEE Electron Device Letters vol. 12, pp. 425-426, Aug. 1991.
M. Wong, M. Moslehi, and D. Reed. "Characterization of Wafer Cleaning and Oxide Etching Using Vapor-Phase Hydrogen Fluoride" Journal of Electrochemical Society, Inc. vol. 138, pp. 1799-1802, Jun. 1991.
M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe and T. Ohmi. "Dependence of Thin Oxide Films Quality on Surface Micro-Roughness" 1991 Symposium on VLSI Technology: Digest of Technical Papers pp. 45,46, 1991.
W. Kern. "The Evolution of Silicon Wafer Cleaning Technology" Journal of Electrochemical Society, Inc. vol. 137, pp. 1887-1892, Jun. 1990.

Affiliated with

Also associated with

Rating

Controlled, gas phase process for removal of trace metal contami does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlled, gas phase process for removal of trace metal contami, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled, gas phase process for removal of trace metal contami will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1141889