Controlled far-field pattern selection in diffraction-coupled se

Details Controlled far-field pattern selection in diffraction-coupled se Controlled far-field pattern selection in diffraction-coupled se

1987-04-06

1988-08-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 26, 372 92, H01S 319

Patent

active

047649356

ABSTRACT:
A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

REFERENCES:
patent: 4661962 (1987-04-01), Clayton

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