Controlled electron mobility galvanomagnetic devices

Details Controlled electron mobility galvanomagnetic devices Controlled electron mobility galvanomagnetic devices

2006-01-10

2006-01-10

Easthom, Karl D. (Department: 2832)

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

C338S03200R

Reexamination Certificate

active

06985066

ABSTRACT:
A controlled electron mobility galvanomagnetic device comprising a layer of indium antimonide alloyed with a Group 13 isoelectronic element antimonide and doped n-type, the layer disposed on an insulating substrate.

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Partin et al, “Growth and characterization of indium antimonide doped with lead telluride,” J. Appl. Phys. 71 (5), Mar. 1, 1992, pp. 2328-2332.

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