Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-07-19
2011-07-19
Barr, Michael (Department: 1717)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C118S729000, C427S523000
Reexamination Certificate
active
07982195
ABSTRACT:
An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.
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PCT International Search Report—International No. PCT/US2005/031832 International Filing Date: Aug. 9, 2005; Date of Mailing May 12, 2006 (Three Pages).
Title: Controlled Dose Ion Implantation.
Agarwal Aditya
Hoglund David
Rathmell Robert D.
Axcelis Technologies Inc.
Barr Michael
Tarolli, Sundheim Covell & Tummino LLP
Walters, Jr. Robert S
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