Controlled current source for I.sup.2 L to analog interfaces

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307296R, 307477, 357 35, 357 92, H03K 19081, H01L 2704

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043486002

ABSTRACT:
Structure fabricating using standard integrated injection logic (I.sup.2 L) process techniques for providing a multiple of controlled current source outputs for driving I.sup.2 L to analog interfaces. The current source structure is formed in minimum die area because of the space saving features of I.sup.2 L and tracks the performance of the I.sup.2 L circuit. The current source includes a common P-type emitter region diffused into an isolated N-type epitaxial layer which has been isolated by a deep N+-type diffusion region. Multiple collector P-type regions which are isolated from each other by the N+-type isolating region are diffused into the isolated portion of the epitaxial layer in spaced relationship to the common emitter region. An ion implanted resistor couples the common emitter region to a source of operating potential such that current is injected from the emitter region via the lateral PNP formed transistors to produce multiple output currents from the collector regions. The collector regions are connected using conductive interconnects to respective I.sup.2 L to analog interfaces to provide current for operation of both the open collector I.sup.2 L gates and the analog devices.

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