Controlled chemical reduction of surface film

Details Controlled chemical reduction of surface film Controlled chemical reduction of surface film

1986-10-23

1987-11-17

Godici, Nicholas P.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228205, B23K 3102

Patent

active

047068701

ABSTRACT:
A process is disclosed for applying an electrical contact to the surface of a semiconductor device. A layer of metal selected from metals such as nickel, silver, copper, or alloys of these metals contacts a selected surface region of the device. A metallic contact is then soldered or otherwise joined to the layer of metal. To facilitate the joining, any native oxide present on the surface of the metal layer is first reduced by the low energy implantation of hydrogen ions into the metal surface.

REFERENCES:
patent: 3182118 (1965-05-01), Proost
patent: 3665590 (1972-05-01), Percival
patent: 3769688 (1973-11-01), Kessler
patent: 4245768 (1981-01-01), Sater
patent: 4305200 (1981-12-01), Fu
patent: 4343830 (1982-08-01), Sarma
patent: 4379218 (1983-05-01), Grebe
NASA Technical Memorandum, NASA TM-78933 by Sater et al.--"The Use of Ion Beam Cleaning to Obtain High Quality Cold Welds with Minimal Deformation".
"Basic Electrical Engineering" by Fitzgerald et al., 5th ed., pp. 374 and 377.

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