Controlled breakover bidirectional semiconductor switch

Details Controlled breakover bidirectional semiconductor switch Controlled breakover bidirectional semiconductor switch

1981-07-29

1989-01-10

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 58, 357 13, 357 86, 307302, 307324, 307239, H01L 29747

Patent

active

047977205

ABSTRACT:
A two-terminal bidirectional semiconductor switching device comprising a body of silicon semiconductor material having in one portion a five-zone switching element and, in another portion integral therewith, a three-zone bidirectional voltage-sensitive breakdown element, there being means including another portion of the body connecting the three-zone element as a gating element to said five-zone element so as to trigger conduction therein bidirectionally when voltage breakdown occurs in either direction in the three-zone element.

REFERENCES:
patent: 3196330 (1965-07-01), Moyson
patent: 3275909 (1966-09-01), Gutzwiller
patent: 3391310 (1968-07-01), Gentry
patent: 3423650 (1969-01-01), Cohen
patent: 3907615 (1975-09-01), Weijland
patent: 4071852 (1978-01-01), Kannam
patent: 4157562 (1979-06-01), D'Altroy et al.
Storm et al., "A Bilateral Silicon Switch", IEEE Trans. on Electron Devices, vol. ED-14, No. 6, pp. 330-333, Jun. 1967.

Affiliated with

Also associated with

Rating

Controlled breakover bidirectional semiconductor switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controlled breakover bidirectional semiconductor switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled breakover bidirectional semiconductor switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2110777