Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-01-25
1986-08-05
Ozaki, George T.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576W, 29578, 29580, 148 15, 148190, H01L 21385
Patent
active
046041508
ABSTRACT:
A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained. Control of the doping transfer can be obtained by the choice of ambients, either dry or steam. Furthermore, removal of the silicon dioxide and polysilicon layers following the doping process is facilitated due to the etch selectivity possible between SiO.sub.2 and Si. If desired, the layers may remain on the silicon body.
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AT&T Bell Laboratories
Fox James H.
Ozaki George T.
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