Controlled boron doping of silicon

Details Controlled boron doping of silicon Controlled boron doping of silicon

1986-04-29

1987-06-30

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 21385

Patent

active

046768475

ABSTRACT:
A technique is described for doping a silicon body with boron. The surface to be doped is typically a trench sidewall, to be used as a storage capacitor or for isolation. By providing a silicon dioxide diffusion control layer, and a polysilicon source layer that incorporates the boron, well-controlled boron doping over a wide concentration range can be obtained. Control of the doping transfer can be obtained by the choice of ambients, either dry or steam. Furthermore, removal of the silicon dioxide and polysilicon layers following the doping process is facilitated due to the etch selectivity possible between SiO.sub.2 and Si. If desired, the layers may remain on the silicon body.

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