Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-11-06
2010-10-05
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S185240, C365S185250, C365S185290
Reexamination Certificate
active
07808827
ABSTRACT:
Systems and/or methods that facilitate discharging bit lines (BL) associated with memory arrays in nonvolatile memory at a controlled rate are presented. A discharge component facilitates discharging the BL at a desired rate thus preventing the “hot switching” phenomenon from occurring within a y-decoder component(s) associated with the nonvolatile memory. The discharge component can be comprised of, in part, a discharge transistor component that controls the rate of BL discharge wherein the gate voltage of the discharge transistor component can be controlled by a discharge controller component. The rate of BL discharge can be determined by the size of discharge transistor component used in the design, the strength and/or size of the y-decoder component, the number of erase errors that occur for a particular memory device, and/or other factors in order to facilitate preventing hot switching from occurring.
REFERENCES:
patent: 3765002 (1973-10-01), Basse
patent: 6667910 (2003-12-01), Abedifard et al.
patent: 7160773 (2007-01-01), Randolph
patent: 2006/0104122 (2006-05-01), Choy
Lee Aaron
Yang Nian
Zhang Jiani
Bui Tha-O
Luu Pho M
Spansion LLC
Turocy & Watson LLP
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