Controlled absorption in heterojunction structures

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357 17, 357 19, 357 4, H01L 29161

Patent

active

042086671

ABSTRACT:
A heterojunction structure made of two semiconductor layers is disclosed in hich light is applied to the structure and absorbed, and the emission of light from the structure is controlled by an electric field applied perpendicularly to the planes of the layers. It is further disclosed that the device can be employed as a selective light filter or modulator.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 4088515 (1975-04-01), Blakeslee
patent: 4103312 (1978-07-01), Esaki
patent: 4137542 (1979-01-01), Esaki

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