Controllable semiconductor rectifier with interference potential

Details Controllable semiconductor rectifier with interference potential Controllable semiconductor rectifier with interference potential

1978-08-30

1980-06-17

Clawson, Jr., Joseph E.

357 30, 357 55, 357 86, H01L 2974

Patent

active

042086698

ABSTRACT:
A controllable semiconductor rectifier which is subject to an interference potential and controllable by a control power comprises a first emitter layer, a first main electrode connected to the first emitter layer, a control base layer connected to the first emitter layer, a main base layer connected to the control base layer and a second emitter layer connected to the main base layer. A connection is established between a portion of the control base layer and the first emitter layer for applying a compensating potential to the first emitter layer for compensating the interference potential and a limiting non-linear component is connected between a portion of the control base layer and the first emitter layer for limiting the interference potential.

REFERENCES:
patent: 4122480 (1978-10-01), Silber et al.

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