Controllable semiconductor component for two current directions

Details Controllable semiconductor component for two current directions Controllable semiconductor component for two current directions

1977-07-12

1978-10-17

Clawson, Jr., Joseph E.

357 55, 357 86, H01L 29747

Patent

active

041212398

ABSTRACT:
A controllable semiconductor component for two current directions comprising a semiconductor wafer having a middle zone of a first conductivity type extending throughout the wafer plane, an upper zone of a second conductivity type adjoining the middle zone from above, a lower zone of the second conductivity type adjoining the middle zone from below, a first main electrode zone of the first conductivity type adjoining a first partial zone on the upper side of the upper zone, a second main electrode zone of the first conductivity type adjoining a first partial zone on the underside of the lower zone, a first control-electrode zone of the second conductivity type on the upper side of the upper zone and at a lateral distance from the first main electrode zone, a second control-electrode zone of the first conductivity type on the upper side of the upper zone and at a distance from the first main-electrode zone and a notch between the control-electrode zones which extends laterally partway between the first partial zone with the first main-electrode zone, on the one hand, and the second partial zone of the upper zone, on the other hand, and in its depth going from the upper towards the lower side of the semiconductor wafer partway into the middle zone, a first main electrode contacting the first main electrode zone and a second partial zone of the upper zone, a second main electrode contacting the second main-electrode zone and a second partial zone of the lower zone, a control-electrode arrangement for separate contacting of the two control-electrode zones, and a case enclosing the wafer, wherein the two control-electrode leads are brought out electrically separated through the case from their separate control electrodes on the semiconductor wafer.

REFERENCES:
patent: 3696273 (1972-10-01), Foster
patent: 3996601 (1976-12-01), Hutson
patent: 4021837 (1977-05-01), Hutson

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