Controllable power semiconductor element with buffer zone and me

Details Controllable power semiconductor element with buffer zone and me Controllable power semiconductor element with buffer zone and me

1994-11-22

1995-11-14

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257142, 257148, H01L 2908, H01L 2978

Patent

active

054669510

ABSTRACT:
Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.

REFERENCES:
patent: 4517582 (1985-05-01), Sittig
patent: 5023691 (1991-06-01), Hagino
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5360983 (1994-11-01), Iwamuro
IEEE Transactions on Electron Devices, vol. Ed. 31, No. 6, Jun., 1984, Baliga et al, "Insulated Gate Transistor", pp. 822-828.
IEEE Paper to the 5th International Symposium on Power Semiconductor Devices and IC's, M. Mori et al, "A High Power IGBT Module For Traction Motor Drive", pp. 287-291.

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