Controllable power semiconductor component

Details Controllable power semiconductor component Controllable power semiconductor component

1995-12-28

1997-08-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257785, 257786, H01L 2974

Patent

active

056613156

ABSTRACT:
In the case of a controllable power semiconductor component, which comprises at least one planar, essentially rectangular power semiconductor chip (13), which power semiconductor chip (13) has on its top side a large-area metallization layer (14) for the large-area electrical connection to a metal mating element (17, 19), and also a separate small-area connection region for the gate connection in the form of a gate pad (16), a simplified form of the metal mating element (17, 19) and adjustment thereof are achieved by virtue of the fact that the gate pad (16) is arranged in a corner of the power semiconductor chip (13).

REFERENCES:
patent: 3525910 (1970-08-01), Philips
patent: 4035831 (1977-07-01), Saeki
patent: 4358785 (1982-11-01), Takigami et al.
patent: 4500907 (1985-02-01), Takigami et al.
patent: 5539220 (1996-07-01), Takahashi

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