Controllable power semiconductor component

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357 234, 357 20, 357 38, 357 43, H01L 2900, H01L 2910, H01L 2906, H01L 2702

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049672550

ABSTRACT:
In a controllable power semiconductor component having a pnpn layer sequence of p-type emitter layer (9), n-type base layer (8), p-type base layer (7) and n-type emitter layer (5) the critical increased field rise during turn-off is reduced as a result of an intermediate layer (11), which has a higher n-doping than the n-type base layer (8) and which is inserted between the n-type base layer (8) and the p-type base layer (7).

REFERENCES:
patent: 4639761 (1987-01-01), Singer et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
Temple, Victor A. K.: MOS-Controlled Thyristors-A New Class of Power Devices. In: IEEE Transactions Electron Devices, vol. ED-33, No. 10, Oct. 1986, S. 1609-1618.
Zekry A. and Gerlach W.: Reduction of the Current Gain of the n-p-n Transistor Component of a Thyristor Due to the Doping Concentration of the p-Base. In: IEEE Transactions on Electron Devices, vol. 35, No. 3, Mar. 1988, S. 365-372.

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