Controllable power semiconductor component

Details Controllable power semiconductor component Controllable power semiconductor component

1989-08-21

1990-10-30

Hille, Rolf

357 234, 357 20, 357 38, 357 43, H01L 2900, H01L 2910, H01L 2906, H01L 2702

Patent

active

049672550

ABSTRACT:
In a controllable power semiconductor component having a pnpn layer sequence of p-type emitter layer (9), n-type base layer (8), p-type base layer (7) and n-type emitter layer (5) the critical increased field rise during turn-off is reduced as a result of an intermediate layer (11), which has a higher n-doping than the n-type base layer (8) and which is inserted between the n-type base layer (8) and the p-type base layer (7).

REFERENCES:
patent: 4639761 (1987-01-01), Singer et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
Temple, Victor A. K.: MOS-Controlled Thyristors-A New Class of Power Devices. In: IEEE Transactions Electron Devices, vol. ED-33, No. 10, Oct. 1986, S. 1609-1618.
Zekry A. and Gerlach W.: Reduction of the Current Gain of the n-p-n Transistor Component of a Thyristor Due to the Doping Concentration of the p-Base. In: IEEE Transactions on Electron Devices, vol. 35, No. 3, Mar. 1988, S. 365-372.

Affiliated with

Also associated with

Rating

Controllable power semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Controllable power semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controllable power semiconductor component will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-278395