Controllable power semiconductor

Details Controllable power semiconductor Controllable power semiconductor

1988-02-04

1989-06-27

Clawson, Jr., Joseph E.

357 20, 357 36, 357 51, 357 56, H01L 2974

Patent

active

048434493

ABSTRACT:
In a controllable power semiconductor component which consists of a plurality of parallel-connected individual elements disposed adjacently to one another, the control contacts of which are connected to a common gate, different line resistances between gate and control contacts are compensated in order to achieve a uniform loading on all individual elements.
In a GTO thyristor, the compensation is preferably achieved by adjusting the gate trough resistance (R.sub.G) in the p-type base (3) between gate contact (5) and n-type emitter (2).

REFERENCES:
A. Jaecklin et al., "Gate Turn-Off Thyristors . . . ," I.E.D.M. 1986, pp. 114-117.
T. Nagand et al., "A Snubber-Less GTO," Power Electronics Specialists Conf., Jun. 1982, Camb., Mass. pp. 1-5.

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