Controllable isotropic plasma etching technique for the suppress

Details Controllable isotropic plasma etching technique for the suppress Controllable isotropic plasma etching technique for the suppress

1994-07-27

1998-01-06

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

1566431, H01L 21265

Patent

active

057054193

ABSTRACT:
In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.

REFERENCES:
patent: 5051794 (1991-09-01), Mori
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5342801 (1994-08-01), Perry et al.
Ma, Diana X.; Lin, Tsu-An; Chen, Ching-Hwa; "High selectivity electron cyclotron resonance etching of submicron polysilicon gate structures", pp. 1217-1226, vol. 10, No. 4, Journal of Vacuum Science and Technology A, Aug. 1992, New York.
Sakai, Yoshio; Reynolds, John L.; and Neurether, Andrew R., "Typography modeling in dry etching processes", pp. 627-633, vol. 131, No. 3, Journal of the Electrochemical Society, Mar. 1984, Manchester, New Hampshire.

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