Controllable impedance attenuator having all connection contacts

Details Controllable impedance attenuator having all connection contacts Controllable impedance attenuator having all connection contacts

1976-09-23

1979-03-06

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 35, 357 58, 357 69, 307221D, 307263, H01L 2992, H01L 2972, H01L 2912

Patent

active

041433831

ABSTRACT:
A semiconductor device having two PIN-diodes arranged in series and in opposition, in which the semiconductor body comprises two surface zones of a first conductivity type which extend in a high-ohmic surface layer, said surface layer separating the surface zones from one another and from a low-ohmic region of the second conductivity type. The surface zones and the low-ohmic region are contacted at the same surface of the semiconductor body, preferably by means of beam leads. The device is particularly suitable for high frequency applications and may form part of an integrated circuit.

REFERENCES:
patent: 3475700 (1969-10-01), Ertel
patent: 3518585 (1970-06-01), Wilcox
patent: 3549960 (1970-12-01), Wedlock
patent: 3686648 (1972-08-01), Matsushita
patent: 3714473 (1973-01-01), Bartelink et al.
patent: 3747201 (1973-07-01), Arai
patent: 3810049 (1974-05-01), Krause

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