Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-06-10
2000-05-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257 24, 257 28, H01L 2906, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
060607238
ABSTRACT:
A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.
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Itoh Kiyoo
Mine Toshiyuki
Mizuta Hiroshi
Nakazato Kazuo
Shimada Toshikazu
Hitachi , Ltd.
Ngo Ngan V.
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