Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1989-04-19
1990-07-24
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330285, H03G 330, H03F 314
Patent
active
049437852
ABSTRACT:
A broadband amplifier having controllable amplification and an extremely high upper frequency limit includes a single-gate field-effect transistor arranged in a common-source configuration and a variable voltage source connected to the source terminal of the single-gate field-effect transistor. The gate terminal of the single-gate field-effect transistor is connected to RF input signals to be amplified. The drain current I.sub.D is varied by a controllable voltage; this voltage changes the gain but does not change the low resistance during the controlled process. The transconductance S of the single-gate field-effect transistor is portional to the square root of the drain current I.sub.D. Thus, two or more single-gate field-effect transistors can be connected in series to form a multiple-stage amplifier without interfering with one another.
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L. Buttner; Verstarkereingangsstufen Mit Feldeffekhransistoren, In: Funk-Technik, NR 23, 1966, S. 832.
Tietze/Schenk; Halbleiter Schaltungstechnik, 5. Auflage, Berlin, Heidelberg, New York, Springer Verlag, 1980, S. 91, 92, 232, 233.
Benz Paul
Lippold Gunther
ALCATEL N.V.
Mullins James B.
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