Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-04-10
2007-04-10
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S166000, C438S149000, C438S257000
Reexamination Certificate
active
11178940
ABSTRACT:
The present invention discloses a control TFT structure (i.e. a driving TFT) for reducing leakage in an OLED display. A semiconductor layer, such as a polysilicon layer, is deposited on a transparent substrate as a channel region. A lightly doped region and a drain region are disposed on one side of the polysilicon layer and a source region is disposed on the opposite side of the polysilicon layer. An insulating layer is deposited covering the surface of the polysilicon layer, the lightly doped region, and the source/drain regions. Source and drain electrodes are disposed in the insulating layer, electrically connecting the source and drain region respectively. A gate metal layer is disposed on the insulating layer, at approximately the top right portion of the polysilicon layer to form a transistor structure.
REFERENCES:
patent: 6351078 (2002-02-01), Wang et al.
patent: 6384427 (2002-05-01), Yamazaki et al.
patent: 6417521 (2002-07-01), Inukai
patent: 6501227 (2002-12-01), Koyama
patent: 6509616 (2003-01-01), Yamazaki
patent: 2003/0089910 (2003-05-01), Inukai
AU Optronics Corp.
Luu Chuong Anh
Thomas Kayden Horstemeyer & Risley
LandOfFree
Control TFT for OLED display does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Control TFT for OLED display, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control TFT for OLED display will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3734880