Control techniques for annealing semiconductors

Details Control techniques for annealing semiconductors Control techniques for annealing semiconductors

1978-08-21

1979-05-22

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148186, H01L 2126

Patent

active

041557794

ABSTRACT:
Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can be used to control the annealing process. Various control mechanisms are described.

REFERENCES:
patent: 3364087 (1968-01-01), Solomon et al.
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3716844 (1973-02-01), Brodsky
patent: 4021675 (1977-05-01), Shifrin
patent: 4063967 (1977-12-01), Graul et al.
patent: 4082958 (1978-04-01), Kirkpatrick
IBM Technical Disclosure Bulletin, vol. 13, No. 2, Jul. 1970, pp. 316 and 317.

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