Control of valley current in a unijunction transistor by electro

Details Control of valley current in a unijunction transistor by electro Control of valley current in a unijunction transistor by electro

1979-04-02

1981-09-29

Wojciechowicz, Edward J.

357 52, 357 64, 357 88, 357 96, 357 91, H01L 2974

Patent

active

042926440

ABSTRACT:
An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

REFERENCES:
patent: 3911463 (1975-10-01), Hull et al.
patent: 4056408 (1977-11-01), Bartko et al.

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