Control of the hydrogen bonding in reactively sputtered amorphou

Details Control of the hydrogen bonding in reactively sputtered amorphou Control of the hydrogen bonding in reactively sputtered amorphou

1984-09-06

1985-08-06

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

136258, 204192R, 204192P, 204298, C23C 1500

Patent

active

045334501

ABSTRACT:
A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a DC voltage bias to the film's substrate during deposition.

REFERENCES:
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4353788 (1982-10-01), Jeffrey et al.
patent: 4417092 (1983-11-01), Moustakas
Thompson et al., Proceedings Int'l Photovol. Sol. En. Conf.; Luxembourg, pp. 231-240, Sep. 1977.
Ho et al., IBM Tech. Disc. Bull., 18, (1976), pp. 3093-3094.
Brodsky et al., IBM Tech. Disc. Bull., 19, (1977), pp. 4802-4803.
Allison et al., Proc. 3rd Europ. Comm. Photovol. Sol. Conf., Oct. 27-30, 1980, pp. 820-824.
Suzuki et al., Jap. Journ. Appl. Phys., 20, (1981), pp. L485-L487.
Martin, Solar Energy Mat., 2, (1979), pp. 143-147.

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