Control of the crystal orientation dependent properties of a fil

Details Control of the crystal orientation dependent properties of a fil Control of the crystal orientation dependent properties of a fil

1993-07-16

1995-10-03

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437225, 437245, 20419213, 20419217, 20429803, 2042982, H01L 21283, C23C 1435

Patent

active

054551978

ABSTRACT:
A method of controlling the crystal orientation dependent properties, such as residual stress, barrier layer effectiveness and resistivity, of reactively sputtered films such as titanium nitride, provide a method of optimizing the design parameters of the deposition apparatus and a method of utilizing the apparatus to produce coated Wafers. A sputtering target is maintained spaced from a wafer with a rotating magnetic field produced by a magnet rotating behind the target. An auxiliary magnet is provided at the wafer to unbalance the target magnetic field and allow ion flux from the plasma to reach the substrate. A film is deposited and the properties of the resulting film measured, particularly, in the case of titanium nitride deposition, the ratio of <200> to <111> crystal orientation, as well as the ratio uniformity. The auxiliary magnet configuration and target to wafer spacing are varied and the ratio remeasured. The variation and measurement are repeated until the ratio and ratio uniformity are achieved. Then the apparatus design is set and wafers manufactured therewith having the desired properties.

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