Control of substrate injection in lateral bipolar transistors

Details Control of substrate injection in lateral bipolar transistors Control of substrate injection in lateral bipolar transistors

1982-11-22

1985-04-02

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576W, 29577C, 29578, 148 15, 148175, 148187, 357 35, 357 44, 357 46, 357 89, 357 50, 357 91, 357 92, H01L 21265, H01L 2174

Patent

active

045078483

ABSTRACT:
A method for fabricating a semiconductor structure which reduces substrate current injection from lateral bipolar transistors. A buried layer of a first conductivity type is formed in a semiconductor substrate of opposite conductivity. An epitaxial layer of the first conductivity type is formed such that at least a portion of the epitaxial layer overlies the buried layer. Isolation oxide regions are formed in a epitaxial layer. The isolation oxide regions extend to the substrate to define an island of electrically isolated epitaxial material. A selected impurity of the first conductivity type is introduced into that portion of the epitaxial layer beneath the to-be-formed lateral transistor. The lateral transistor is formed in the epitaxial layer.

REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 4025364 (1977-05-01), Smith
patent: 4045251 (1977-08-01), Graul et al.
patent: 4082571 (1978-04-01), Graul et al.
patent: 4144098 (1979-03-01), Roesner
patent: 4167425 (1979-09-01), Herbst
patent: 4199378 (1980-04-01), van Gils
patent: 4231057 (1980-10-01), Momma et al.
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4320411 (1982-03-01), Fukushima
patent: 4398338 (1983-08-01), Tickle et al.
patent: 4433471 (1984-02-01), Ko et al.

Affiliated with

Also associated with

Rating

Control of substrate injection in lateral bipolar transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of substrate injection in lateral bipolar transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of substrate injection in lateral bipolar transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1084768