Control of Si doping in GaAs, (Al,Ga)As and other compound semic

Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined

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427 38, 427 85, 427 87, 427 93, 427250, 4272552, 427294, B05D 306

Patent

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045500312

ABSTRACT:
A method of modulation doping GaAs, (Al,Ga)As and related compounds with silicon ions during molecular beam epitaxy (MBE) growth.

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