Control of saturation of integrated bipolar transistors

Details Control of saturation of integrated bipolar transistors Control of saturation of integrated bipolar transistors

1993-07-28

2000-03-14

Lam, Tuan T.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Accelerating switching

327432, H03K 1708

Patent

active

060378263

ABSTRACT:
Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.

REFERENCES:
patent: 4055794 (1977-10-01), Ickes et al.
patent: 4404478 (1983-09-01), Rischmuller
patent: 4574221 (1986-03-01), Hess et al.
patent: 4617481 (1986-10-01), Masuda
patent: 4701538 (1987-10-01), Marchio et al.
patent: 4713561 (1987-12-01), Yamada
patent: 4749876 (1988-06-01), Gale et al.
patent: 4786827 (1988-11-01), Gariboldi et al.
patent: 5017802 (1991-05-01), Feldtkeller
patent: 5061863 (1991-10-01), Mori et al.
patent: 5278461 (1994-01-01), Bucksch et al.
IBM Technical Disclosure Bulletin vol. 17, No. 4, Sep. 1974. "Dynamic Transistor Antisaturation Control" by K. H. Knickmeyer.
Patent Abstracts of Japan, vol. 9, No. 321 (E-367), Dec. 17, 1985.
Patent Abstracts of Japan, vol. 10, No. 248 (E-431), Aug. 16, 1986.

Affiliated with

Also associated with

Rating

Control of saturation of integrated bipolar transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of saturation of integrated bipolar transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of saturation of integrated bipolar transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-173236