Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2005-04-26
2005-04-26
Hassanzadeh, Parviz (Department: 1763)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S710000, C427S569000, C156S345280, C156S345430, C156S345470, C156S345480, C118S7230ER, C118S7230IR
Reexamination Certificate
active
06884635
ABSTRACT:
An RF power supply system (200) for use with an electrode (60) in a plasma reactor system (10) capable of supporting a plasma (32) with a plasma load impedance (ZR), wherein the electrode comprises a plurality of electrode segments (62a,62b, . . . ,62n). The system comprises a master oscillator (210), and a plurality of RF power supply subsystems (220a,220b, . . .220n) each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (224), an amplifier/power supply (230), a circulator (236), a directional coupler (242), and a match network (MN/L). The latter has a match network impedance. The system further includes a control system (184) electronically connected to each RF power supply subsystem. The control system dynamically changes the match network impedance for each subsystem to match the plasma load impedance, and also adjusts one or more of the phase shifters in response to an electrode segment receiving power from other electrode segments. A method of controlling the RF power supply system is disclosed, as is a method for processing a substrate (40) with a plasma processing system having the RF power supply system of the present invention.
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Hassanzadeh Parviz
Pillsbury & Winthrop LLP
Tokyo Electron Limited
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