Control of oxygen concentration in single crystal pulled up from

Details Control of oxygen concentration in single crystal pulled up from Control of oxygen concentration in single crystal pulled up from

1994-08-17

1996-06-11

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117916, C30B 1520

Patent

active

055245749

ABSTRACT:
The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.

REFERENCES:
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4417943 (1983-11-01), Jacques et al.
patent: 4936949 (1990-06-01), Kida et al.
patent: 5073229 (1991-12-01), Yamashita et al.
patent: 5152867 (1992-10-01), Kitaura et al.
patent: 5260037 (1993-11-01), Kitaura et al.
patent: 5270020 (1993-12-01), Suzuki et al.
patent: 5392729 (1995-02-01), Kuramochi et al.

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