Control of output beam divergence in a semiconductor...

Details Control of output beam divergence in a semiconductor... Control of output beam divergence in a semiconductor...

2004-09-16

2008-08-05

Bovernick, Rodney (Department: 2874)

Optical waveguides

Planar optical waveguide

C385S131000, C385S144000, C372S009000, C372S045010

Reexamination Certificate

active

07409134

ABSTRACT:
A semiconductor laser device incorporates a beam control layer for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer in which the property varies gradually from a first level to a second level, and a second sub-layer in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.

REFERENCES:
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4794611 (1988-12-01), Hara et al.
patent: 4882734 (1989-11-01), Scifres et al.
patent: 5289484 (1994-02-01), Hayakawa et al.
patent: 5812578 (1998-09-01), Schemmann et al.
patent: 5815521 (1998-09-01), Hobson et al.
patent: 5923689 (1999-07-01), Su et al.
patent: 6028877 (2000-02-01), Kimura
patent: 6141363 (2000-10-01), Ougazzaden et al.
patent: 6961358 (2005-11-01), Erbert et al.
patent: 2001/0028668 (2001-10-01), Fukunaga et al.
patent: 2004/0047378 (2004-03-01), Erbert et al.
patent: 0547044 (1993-06-01), None
patent: 61-156788 (1986-07-01), None
patent: 01/06608 (2001-01-01), None
patent: 02/25787 (2002-03-01), None
Yang, G. et al., “Design and fabrication of 980nm InGaAs/AlGaAs quantum well lasers with low beam divergence”, SPIE vol. 2886, pp. 258-263 (1996).
Yen, S. et al., “Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current”, Optical and Quantum Electronics vol. 28, pp. 1229-1238 (1996).
Yen, S. et al., “980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence”, Proc. of 15th IEEE International Semiconductor Laser Conference, pp. 13-14 (1996).
UK Patent Office, Search Report for GB 0323905.0 issued Nov. 9, 2004.
Wenzel, H. et al., “High-power diode lasers with small vertical beam divergence emitting at 808nm”, Electronics Letters, vol. 37, No. 16, pp. 1024-1026 (Aug. 2, 2001), Great Britain.
Nayar, B. K. et al., “Novel high-power narrow-beam divergence tapered laser arrays at 980 nm”, Technical Digest, Conference on Lasers and Electro-Optics, San Francisco, CA, May 3, 1988, pp. 39-40.
Vakhshoori, D. et al., “980 nm spread index laser with strain compensated InGaAs/GaAsp/InGaP and 90% fibre coupling efficiency”, Electronics Letters vol. 32, No. 11, May 23, 1996, pp. 1007-1008, Great Britain.
Lay, T.S. et al., “Electro-modulation spectroscopy and laser performance of an InGaAsP asymmetric multi-quantum-well structure”, Optics Communications, vol. 211, No. 1-6, Oct. 1, 2002, pp. 289-294, North-Holland Publishing Co., Amsterdam, Netherlands.
Buda, M. et al., “Asymmetric design of semiconductor laser diodes: thin p-clad and low divergence InGaAs/AlGaAs/GaAs devices”, 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, vol. 1 of 2, pp. 647-648, Glasgow, Scotland, Nov. 13, 2002.
Smowton, P. M., et al., 650 nm lasers with narrow far-field divergence with integrated optical mode expansion layers, IEEE J. of Selected Topics in Quantum Electronics, vol. 5, No. 3, May 1999, pp. 735-739.
European Patent Office acting as the IPSA, Written Opinion in Appln. No. PCT/GB2004/003959, issued Apr. 18, 2006.

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