Control of contact resistance in quantum well intermixed...

Details Control of contact resistance in quantum well intermixed... Control of contact resistance in quantum well intermixed...

2006-11-21

2006-11-21

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257SE21089

Reexamination Certificate

active

07138285

ABSTRACT:
A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.

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