Control of breakdown voltage for microelectronic packaging

Details Control of breakdown voltage for microelectronic packaging Control of breakdown voltage for microelectronic packaging

2008-01-29

2008-01-29

Sherry, Michael (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

Reexamination Certificate

active

10932152

ABSTRACT:
Reduce breakdown voltage and control breakdown path for electrostatic discharge to terminals of microelectronic packages, such as no-connect Land Grid Array (LGA) pads. In one embodiment, solder resist openings with a small separation distance are used to provide an air breakdown path between a no-connect LGA pad and the surrounding metal and to reduce the breakdown voltage. In one implementation, the no-connect pad has a non-round shape with a protruding portion on the dielectric layer. The air surrounding a solder resist opening over the tip of the protruding portion of the no-connect pad and a nearby solder resist opening over the surrounding metal provides a shortest air breakdown path and the lowest breakdown voltage. Alternatively, sharp features (e.g., metal traces) with a minimum separation distance can be arranged pointing at each other under the solder resist layer, or other dielectric layer inside the package, to provide a non-exposed breakdown path.

REFERENCES:
patent: 4532419 (1985-07-01), Takeda
patent: 5970321 (1999-10-01), Hively
patent: 6002569 (1999-12-01), Horvath
patent: 6101078 (2000-08-01), Fujii et al.
patent: 6433394 (2002-08-01), Intrater
patent: 6597187 (2003-07-01), Eldridge et al.
patent: 6752635 (2004-06-01), Searls et al.

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